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this is information on a product in full production. september 2012 doc id 15640 rev 4 1/17 17 stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 n-channel 620 v, 0.68 ? typ., 8.4 a supermesh3? power mosfet in to-220fp, i2pakfp, i2pak, to-220 packages datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d p w stf10n62k3 620 v < 0.75 ? 8.4 a (1) 1. limited by package 30 w stfi10n62k3 STI10N62K3 8.4 a 125 w stp10n62k3 to-220fp 1 2 3 1 2 3 i2pak 1 2 3 1 2 3 to-220 i2pakfp tab ta b '7$% * 6 am01476v1 table 1. device summary order codes marking package packaging stf10n62k3 10n62k3 to-220fp tube stfi10n62k3 10n62k3 i2pakfp STI10N62K3 10n62k3 i2pak stp10n62k3 10n62k3 to-220 www.st.com
contents stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 2/17 doc id 15640 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 electrical ratings doc id 15640 rev 4 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i2pakfp i2pak to-220 v ds drain source voltage 620 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 8.4 (1) 1. limited by maximum junction temperature 8.4 a i d drain current (continuous) at t c = 100 c 5.2 (1) 5.2 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 33.6 (1) 33.6 a p tot total dissipation at t c = 25 c 30 125 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 8a e as single pulse avalanche energy (3) 3. starting t j = 25 c, i d = i ar , v dd = 50 v 220 mj dv/dt (4) 4. i sd 8.4 a, di/dt = 400 a/s, v dd = 80% v (br)dss , v ds peak v (br)dss peak diode recovery voltage slope 12 v/ns esd gate-source human body model (r = 1.5 k ? , c = 100 pf) 2.5 kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220fp i2pakfp i2pak to-220 r thj-case thermal resistance junction-case max 4.17 1.00 c/w rt hj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 4/17 doc id 15640 rev 4 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = 620 v v ds = 620 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 4 a 0.68 0.75 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 4 a - 6 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1250 138 16 - pf pf pf c o(tr) (2) 2. c oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 496 v, v gs = 0 - 56 - pf c o(er) (3) 3. c oss eq. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 496 v, v gs = 0 - 38 - pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -3.5- ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 8 a, v gs = 10 v (see figure 18 ) - 42 7.4 23 - nc nc nc
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 electrical characteristics doc id 15640 rev 4 5/17 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d = 4 a, r g = 4.7 ?, v gs = 10 v (see figure 17 ) - 14.5 15 41 31 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 8.4 33.6 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 8 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100a/s v dd = 60 v (see figure 22 ) - 320 2 13 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 410 2.9 14 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage (id = 0) igs= 1 ma 30 - v
electrical characteristics stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 6/17 doc id 15640 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp, i2pakfp figure 3. thermal impedance for to-220fp, i2pakfp figure 4. safe operating area for i2pak, to- 220 figure 5. thermal impedance for i2pak, to- 220 figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 0.01 am0 3 910v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 909v1 i d 6 4 2 0 0 10 v d s (v) 20 (a) 8 10 5v 6v 7v v g s =10v 12 14 16 1 8 am0 3 911v1 i d 6 4 2 0 1 4 v g s (v) 8 (a) 2 6 9 8 10 3 57 12 vd s = 15 v am0 3 912v1
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 electrical characteristics doc id 15640 rev 4 7/17 figure 8. normalized bv dss vs temperature figure 9. static drain-source on-resistance figure 10. output capacitance stored energy figure 11. capacitance variations figure 12. gate charge vs gate-source voltage figure 13. normalized on-resistance vs temperature bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.90 0.95 1.00 1.05 1.10 125 150 id = 1 ma am0 3 91 3 v1 r d s (on) 0.072 0.070 0.06 8 0.066 0 2 i d (a) ( ? ) 1 3 0.074 0.076 0.07 8 v g s =10v 5 4 6 7 8 am0 3 914v1 e co ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 am0 3 917v1 c 1000 100 10 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 3 916v1 v g s 6 4 2 0 0 q g (nc) (v) 3 0 8 10 20 10 v dd =496v i d = 8 a 40 12 3 00 200 100 0 400 500 v d s am0 3 915v1 v d s (v) r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 150 0.0 am0 3 919v1 vgs = 10 v id = 4 a
electrical characteristics stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 8/17 doc id 15640 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. maximum avalanche energy vs temperature figure 16. source-drain diode forward characteristics v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 150 am0 3 91 8 v1 id = 100 a e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 200 220 v dd =50 v i d = 8 a am0 3 921v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 t j =150c 60 70 8 0 0. 3 t j =25c t j =-50c am0 3 920v1
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 test circuits doc id 15640 rev 4 9/17 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 10/17 doc id 15640 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 package mechanical data doc id 15640 rev 4 11/17 figure 23. to-220fp drawing 7012510_rev_k_b
package mechanical data stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 12/17 doc id 15640 rev 4 table 10. i 2 pakfp (to-281) mechanical data figure 24. i 2 pakfp (to-281) drawing dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 package mechanical data doc id 15640 rev 4 13/17 figure 25. i2pak (to-262) drawing table 11. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
package mechanical data stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 14/17 doc id 15640 rev 4 table 12. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 package mechanical data doc id 15640 rev 4 15/17 figure 26. to-220 type a drawing 00159 88 _typea_rev_ s
revision history stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 16/17 doc id 15640 rev 4 5 revision history table 13. document revision history date revision changes 08-jun-2009 1 first release. 22-jun-2009 2 added new package, mechanical data: i2pak 06-aug-2012 3 added package, mechanical data: i2pakfp updated table 1: device summary , table 2: absolute maximum ratings , table 3: thermal data , table 4: on /off states . minor text changes. 13-sep-2012 4 changed value in the title from 3.8 a to 8.4 a.
stf10n62k3, stfi10n62k3, STI10N62K3, stp10n62k3 doc id 15640 rev 4 17/17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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